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Broadband GaN HEMTs suit applications to 4 GHz.

2015-04-22 14:31:06| Industrial Newsroom - All News for Today

Available in 2-leaded flange and pill packages, Model CGHV40050 operates from 50 V rail and delivers 50 W typ output power up to 4 GHz. Device provides 17.5 dB small signal gain at 1.8 GHz and 55% efficiency at PSAT. Rated for operating junction temperature of 225°C and case operating temperature spanning -40 to +80°C, transistor is suited for RF and microwave applications, including narrow band UHF applications, L- and S-Band applications, and multi-octave bandwidth amplifiers.

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