Offering alternative to GaAs-based solutions and available as flip-chip die with 500 microns bump pitch, UltraCMOS® PE42524 SPDT RF SOI (silicon on insulator) switch die supports 10–40 GHz operation and exhibits 47 dB isolation and 2.2 dB insertion loss at 30 GHz as well as 50 dBm IIP3 at 13.5 GHz. Respective switching and settling times are 225 and 840 nsec, and ESD rating is 2,000 V HBM on all pins. No blocking capacitors are required if DC voltage is not present on RF ports.