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High-Power Shunt PIN Diodes: SMP1331-087LF Datasheet

2016-01-19 14:51:41| wirelessdesignonline Downloads

The SMP1331-087LF is a surface mountable, low capacitance silicon PIN diode designed as a shunt connected PIN diose for high-power, high-volume switch and attenuator applications from 10 MHz to more than 6 GHz. Features include low thermal resistance of 26°C/W, a 0.75 W dissipation power rating, and a 2-pin QFN packaging.

Tags: pin datasheet diodes shunt

 

High-Power Shunt PIN Diodes: SMP1331-087LF Datasheet

2016-01-19 14:51:41| rfglobalnet Downloads

The SMP1331-087LF is a surface mountable, low capacitance silicon PIN diode designed as a shunt connected PIN diode for high-power, high-volume switch and attenuator applications from 10 MHz to more than 6 GHz. Features include low thermal resistance of 26°C/W, a 0.75 W dissipation power rating, and a 2-pin QFN packaging.

Tags: pin datasheet diodes shunt

 
 

High-Power Shunt PIN Diodes: SMP1331-085LF Datasheet

2016-01-19 14:48:51| wirelessdesignonline Downloads

The SMP1331-085LF is a surface mountable, low capacitance silicon PIN diode designed as a shunt connected PIN diose for high-power, high-volume switch and attenuator applications from 10 MHz to more than 6 GHz. Features include low thermal resistance of 28°C/W, a 2.5 W dissipation power rating, and a 3-pin QFN packaging.

Tags: pin datasheet diodes shunt

 

High-Power Shunt PIN Diodes: SMP1331-085LF Datasheet

2016-01-19 14:48:51| rfglobalnet Downloads

The SMP1331-085LF is a surface mountable, low capacitance silicon PIN diode designed as a shunt connected PIN diode for high-power, high-volume switch and attenuator applications from 10 MHz to more than 6 GHz. Features include low thermal resistance of 28°C/W, a 2.5 W dissipation power rating, and a 3-pin QFN packaging.

Tags: pin datasheet diodes shunt

 

6 W Power Amplifier: MAAP-011140-DIE Datasheet

2016-01-15 14:10:40| rfglobalnet Downloads

The MAAP-011140-DIE is a 6 W, 4-stage amplifier in bare die form. With an operating frequency range from 27.5 to 30.0 GHz, 24 dB of linear gain, 6W of saturated output power, and 23 percent efficiency while biased at 6 V, this power amplifier is ideally suited for VSAT communications.

Tags: power amplifier datasheet power amplifier

 

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