je.st
news
Tag: datasheet
GaN Power Amplifiers: TGA2219-CP Datasheet
2015-12-10 11:00:02| wirelessdesignonline Downloads
The TGA2219-CP is a 3-stage GaN power amplifier that operates from 13.4-16.5 GHz, provides more than 25 W of saturated output power, and has greater than 27 dB of large signal gain. The device is available in a 15.2 x 15.2mm bolt-down package, and is ideally suited for satellite communications, data link, and radar applications.
Tags: power
gan
amplifiers
datasheet
GaN Power Amplifiers: TGA2219 Datasheet
2015-12-10 10:55:17| rfglobalnet Downloads
The TGA2219 is a Ku-band MMIC GaN power amplifier that operates from 13.4-16.5 GHz, provides more than 25 W of saturated output power, and has greater than 27 dB of large signal gain. The device is available in a 15.2 x 15.2mm bolt-down package, and is ideally suited for satellite communications, data link, and radar applications.
Tags: power
gan
amplifiers
datasheet
GaN Power Amplifiers: TGA2219 Datasheet
2015-12-10 10:55:17| wirelessdesignonline Downloads
The TGA2219 is a Ku-band MMIC GaN power amplifier that operates from 13.4-16.5 GHz, provides more than 25 W of saturated output power, and has greater than 27 dB of large signal gain. The device is available in a 15.2 x 15.2mm bolt-down package, and is ideally suited for satellite communications, data link, and radar applications.
Tags: power
gan
amplifiers
datasheet
25W, 32V, DC-12 GHz GaN RF Transistor: TGF2979-SM Datasheet
2015-12-10 09:55:36| rfglobalnet Home Page
The TGF2979-SM is a 5W discrete GaN on SiC HEMT with an operating frequency in the DC-12 GHz range, and an operating voltage of 25V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.
Tags: ghz
gan
transistor
datasheet
25W, 32V, DC-12 GHz GaN RF Transistor: TGF2979-SM Datasheet
2015-12-10 09:55:36| wirelessdesignonline Downloads
The TGF2979-SM is a 5W discrete GaN on SiC HEMT with an operating frequency in the DC-12 GHz range, and an operating voltage of 25V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.
Tags: ghz
gan
transistor
datasheet
Sites : [53] [54] [55] [56] [57] [58] [59] [60] [61] [62] [63] [64] [65] [66] [67] [68] [69] [70] [71] [72] next »