Home › datasheet
 

Keywords :   


Tag: datasheet

27 W Discrete Power Transistor: TGF2954 Datasheet

2015-10-27 11:54:27| rfglobalnet Home Page

The TGF2954 is a 27W discrete GaN on SiC HEMT with an operating frequency in the DC – 12 GHz range, has a saturated output power of 44.5 dBm, and power gain of 19.5 dB at 3 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation.

Tags: power discrete transistor datasheet

 

27 W Discrete Power Transistor: TGF2954 Datasheet

2015-10-27 11:54:27| wirelessdesignonline Downloads

The TGF2954 is a 27W discrete GaN on SiC HEMT with an operating frequency in the DC – 12 GHz range, has a saturated output power of 44.5 dBm, and power gain of 19.5 dB at 3 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation.

Tags: power discrete transistor datasheet

 
 

12 W Discrete Power Transistor: TGF2953 Datasheet

2015-10-27 11:51:40| rfglobalnet Home Page

The TGF2953 is a 12W discrete GaN on SiC HEMT with an operating frequency in the DC – 12 GHz range, has a saturated output power of 41.2 dBm, and power gain of 18.2 dB at 3.5 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation.

Tags: power discrete transistor datasheet

 

12 W Discrete Power Transistor: TGF2953 Datasheet

2015-10-27 11:51:40| wirelessdesignonline Downloads

The TGF2953 is a 12W discrete GaN on SiC HEMT with an operating frequency in the DC – 12 GHz range, has a saturated output power of 41.2 dBm, and power gain of 18.2 dB at 3.5 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation.

Tags: power discrete transistor datasheet

 

7 W Discrete Power Transistor: TGF2952 Datasheet

2015-10-27 11:45:50| rfglobalnet Home Page

The TGF2952 is a 7W discrete GaN on SiC HEMT with an operating frequency in the DC – 14 GHz range, has a saturated output power of 38.4 dBm, and power gain of 20.4 dB at 3 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation.

Tags: power discrete transistor datasheet

 

Sites : [70] [71] [72] [73] [74] [75] [76] [77] [78] [79] [80] [81] [82] [83] [84] [85] [86] [87] [88] [89] next »