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20W, 32V, DC-12 GHz GaN RF Transistor: TGF2978-SM Datasheet

2015-12-10 09:52:24| rfglobalnet Downloads

The TGF2978-SM is a 5W discrete GaN on SiC HEMT with an operating frequency in the DC-12 GHz range, and an operating voltage of 20V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

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20W, 32V, DC-12 GHz GaN RF Transistor: TGF2978-SM Datasheet

2015-12-10 09:52:24| wirelessdesignonline Downloads

The TGF2978-SM is a 5W discrete GaN on SiC HEMT with an operating frequency in the DC-12 GHz range, and an operating voltage of 20V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

Tags: ghz gan transistor datasheet

 
 

5W, 32V, DC-12 GHz GaN RF Transistor: TGF2977-SM Datasheet

2015-12-10 09:48:32| rfglobalnet Downloads

The TGF2977-SM is a 5W discrete GaN on SiC HEMT with an operating frequency in the DC-12 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

Tags: ghz gan transistor datasheet

 

5W, 32V, DC-12 GHz GaN RF Transistor: TGF2977-SM Datasheet

2015-12-10 09:48:32| wirelessdesignonline Downloads

The TGF2977-SM is a 5W discrete GaN on SiC HEMT with an operating frequency in the DC-12 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

Tags: ghz gan transistor datasheet

 

5.0 - 6.0 GHz GaN Power Amplifier: TGA2307-SM Datasheet

2015-12-04 10:03:26| rfglobalnet Downloads

Qorvo’s new TGA2307-SM is a GaN Power Amplifier able to operate over the 5.0 - 6.0 GHz frequency range. It produces greater than 47 dBm of saturated output power with a power-added efficiency greater than 44%, and a large signal gain greater than 20 dB. The device is optimized for use in both commercial and military applications such as C-band radar and satellite communications.

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