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120W, 36V, DC-3.5 GHz Power Transistor: T1G4012036-FL Datasheet

2015-09-01 12:38:37| rfglobalnet Downloads

The T1G4012036-FL is a 100W discrete GaN on SiC HEMT with an operating frequency in the DC – 3.5 GHz range, and an operating voltage of 36V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

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100W, 32V, DC-3.5 GHz Power Transistor: TGF2819-FL Datasheet

2015-09-01 12:24:46| rfglobalnet Downloads

The TGF2819-FL is a 100W discrete GaN on SiC HEMT with an operating frequency in the DC – 3.5 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

Tags: power ghz transistor datasheet

5W, 32V, 0.03-3.5 GHz Input-Matched Transistor: T1G3000532-SM Datasheet

2015-09-01 12:16:51| rfglobalnet Downloads

The T1G3000532-SM is a 5W discrete GaN on SiC HEMT with an operating frequency in the 0.03-3.5 GHz range, and an operating voltage of 32V. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

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285W, 36V, DC-2 GHz Power Transistor: T1G2028536-FS Datasheet

2015-09-01 12:01:28| rfglobalnet Downloads

The T1G2028536-FS is a 285W discrete GaN on SiC HEMT with an operating frequency in the DC – 2 GHz range, and an operating voltage of 36V. The transistor is constructed with TriQuint’s proven TQGaN25HV process and is useful for a wide variety of applications including military and civilian radar, radio communications, and avionics.

Tags: power ghz transistor datasheet