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Infineon's 700W L-Band Transistor With Highest-In-Industry Output Power Reduces BOM And Provides Higher Reliability And Ruggedness
2014-03-25 06:52:50| rfglobalnet News Articles
Infineon Technologies AG recently introduced its 700W L-Band RF power transistor featuring the highest-in-industry L-Band output power (700W) available for radar systems operating in the 1200 – 1400 MHz frequency range.
Tags: power
higher
output
reliability
Infineon's 700W L-Band Transistor With Highest-In-Industry Output Power Reduces BOM And Provides Higher Reliability And Ruggedness
2014-03-25 06:52:50| wirelessdesignonline News Articles
Infineon Technologies AG recently introduced its 700W L-Band RF power transistor featuring the highest-in-industry L-Band output power (700W) available for radar systems operating in the 1200 – 1400 MHz frequency range.
Tags: power
higher
output
reliability
Efficient Power Conversion Corporation (EPC) Expands High Frequency eGaN Power Transistor Family Capable Of Amplification Into The Multiple GHz Range
2014-02-21 01:23:45| electronicsweb News Articles
Efficient Power Conversion Corporation, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs extends its family of high-speed, high performance transistors with the EPC8010 power transistor
Transistor Output Photocouplers cut device power consumption.
2014-02-18 14:33:37| Industrial Newsroom - All News for Today
Employing high-output LED, Models TLP182, TLP183, TLP292, and TLP293 provide same high current transfer ratio of 50–600% at input currents of 5 mA and 0.5 mA, making it possible to minimize current to LED and reduce power consumption. Models TLP292/TLP293 come in SO4 package, while Models TLP182/TLP183 come in 4-pin SO6 package. Operating at ambient temperatures up to 125°C, photocouplers are suited for PLCs and inverters, compact power supplies, and AC line detection in household appliances. This story is related to the following:Optics and PhotonicsSearch for suppliers of: Photocouplers
MACOM Announces High Efficiency 500 W GaN On SiC HEMT Pulsed Power Transistor For Avionics Applications
2014-02-07 05:25:25| rfglobalnet News Articles
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, recently announced a new GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications.
Tags: high
power
applications
efficiency
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