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P-Channel Power MOSFET offers low RDS(ON) values.

2014-05-01 14:30:19| Industrial Newsroom - All News for Today

Supplied in 2 x 2 mm PowerPAK® SC-70 package, SiA453EDJ p-channel TrenchFET® power MOSFET conserves space and increases power efficiency in portable electronics. RoHS-compliant and halogen-free product, 100% Rg and UIS tested, offers on-resistance of 18.5 m&Omega; (-10 V), 23.5 m&Omega; (-4.5 V), 26.0 m&Omega; (-3.7 V), and 37.7 m&Omega; (-2.5 V) as well as 4,000 V built-in ESD protection. While -30 V VDS provides headroom needed for over-voltage spikes, 12 V VGS enables on-resistance ratings of -3.7 and -2.5 V.<br /> This story is related to the following:MOSFETs

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Future Electronics has the 40V StrongIRFET(TM) Power MOSFET Family from International Rectifier

2014-04-10 06:00:00| Industrial Newsroom - All News for Today

Pointe Claire, Quebec - Future Electronics, a global leading distributor of electronic components, has the 40V StrongIRFET&trade; Power MOSFET Family from International Rectifier.<br /> <br /> The family of StrongIRFET power MOSFETs features ultra low on-state resistance RDS(ON) for a wide variety of industrial applications including battery packs, inverters, Uninterruptible Power Supplies (UPS), solar inverters, forklift trucks, power tools, mobility scooters and ORing and Hot Swap.<br /> <br ...This story is related to the following:MOSFETs |

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Smallest 60V Power MOSFET from Diodes Incorporated Boosts Power Density

2014-04-02 07:54:36| Electronics - Topix.net

Diodes Incorporated has introduced the world's smallest 60V N-channel power MOSFET with a sub-100m? on-resistance.

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Smallest 60V Power MOSFET from Diodes Incorporated Boosts Power Density

2014-04-01 22:03:00| Semiconductors - Topix.net

Diodes Incorporated has introduced the world's smallest 60V N-channel power MOSFET with a sub-100m? on-resistance.

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Dual N-Channel Power MOSFET features low on-resistance.

2014-03-31 14:31:25| Industrial Newsroom - All News for Today

Integrating 2 MOSFETs into one PowerPAK® SC-70 package with 2 x 2 mm footprint, halogen-free and RoHS-compliant SiA936EDJ helps conserve PCB space, simplify designs, and increase power efficiency in portable electronics. This dual n-channel TrenchFET® power MOSFET offers low on-resistance for 20 V (12 and 8 V VGS) devices at 4.5 and 2.5 V gate drives. On-resistance is 34 m&Omega; (4.5 V), 37 m&Omega; (3.7 V), and 45 m&Omega; (2.5 V), and built-in ESD protection is rated at 2,000 V. This story is related to the following:MOSFETs

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