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Micrel Launches New 85V Half Bridge MOSFET Driver With Adaptive Dead Time and
2014-01-08 13:53:08| Electronics - Topix.net
The Adaptive-Dead-Time circuitry actively monitors the Half Bridge to minimize the time between high and low side MOSFET transitions, which maximizes power efficiency.
Diode Bridge integrates low-loss MOSFET base bridges, controller.
2014-01-06 14:30:33| Industrial Newsroom - All News for Today
Available in 40 pin package, RoHS-compliant PD70224 IdealPoE™ diode bridge consists of dual pack of MOSFET-based full-bridge rectifiers. Low-RDS 0.16 Ω N-channel MOSFETS optimize potential efficiency and output power, while integration eliminates need to add such additional external components as controllers and FETs. Product suits 2-pair applications compliant with IEEE802.3af and IEEE802.3at as well as 4-pair powered devices using Universal PoE (up to 51 W) and PoH (up to 95 W). This story is related to the following:Bridge Diodes |
Tags: base
bridge
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bridges
Vishay Intertechnology's Si7655DN -20 V P-Channel MOSFET Wins EDN China 2013 Innovation Award
2013-12-16 06:00:00| Industrial Newsroom - All News for Today
MALVERN, Pa. — Vishay Intertechnology, Inc. (NYSE: VSH) today announced that its Si7655DN -20 V p-channel Gen III power MOSFET has won an EDN China 2013 Innovation Award. Presented at an award ceremony on Nov. 12 in Shanghai, the Si7655DN received a Best Product Award in the Power Devices and Modules category.<br /> <br /> The EDN China Innovation Awards were introduced in 2005 to recognize achievements in the design of ICs and related products in the Chinese market. This year, 144 ...This story is related to the following:MOSFETs |
Tags: china
award
innovation
wins
Power MOSFET features max on-resistance of 0.99 milliohm.
2013-12-10 14:32:27| Industrial Newsroom - All News for Today
Provided in PMPAK5x6 package with integrated thermal pad and standard SO-8 footprint compatible with other enhanced 5 x 6 mm power packages, AP1A003GMT-HF-3 is intended for use in high-current load switching where low voltage drop across MOSFET switch is required to minimize conduction losses. This RoHS-compliant and BFR-/halogen-free product features breakdown voltage rating of 30 V and max drain-source current rating of 260 A. This story is related to the following:MOSFETs
Tags: power
features
max
mosfet
P-Channel Gen III Power MOSFET measures 2.4 x 2.0 x 0.4 mm.
2013-12-05 14:30:05| Industrial Newsroom - All News for Today
Supplied in 30-pin CSP MICRO FOOT® package with 0.4 mm profile, Si8851EDB increases efficiency while conserving space in mobile computing devices. This -20 V TrenchFET® p-channel Gen III power MOSFET offers on-resistance of 8.0 and 11.0 mΩ at respective gate drive of -4.5 and -2.5 V. Optimized for load and battery switches in power management applications for tablets, smartphones, and notebooks, halogen-free and RoHS-compliant device also provides 6 kV typ ESD protection. This story is related to the following:MOSFETs
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