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Tag: mosfet
Power MOSFET Gate Driver suits automotive applications.
2015-04-08 14:31:08| Industrial Newsroom - All News for Today
Housed in 2.8 x 2.9 mm PS-8 package, single-channel Model TPD7104F enables use of N-channel power MOSFETs for high-side switching applications. IC features self-contained charge pump that optimizes MOSFET switch and eliminates need for external components. Providing overcurrent protection and diagnostic functions, device is suited for automotive applications using 12 V batteries to operate N-channel MOSFETs, including semiconductor relays and load switches.
Tags: power
applications
automotive
driver
Compact Power MOSFET is designed for automotive applications.
2015-04-01 14:31:06| Industrial Newsroom - All News for Today
Offering alternative to D²PAK and DPAK devices used in automotive applications, AEC-Q101-qualified SQJQ402E comes in 100% lead (Pb)-free, 8 x 8 x 1.8 mm PowerPAK® 8x8L package featuring gull-wing leads for mechanical stress relief. This 40 V TrenchFET® power MOSFET, operating to +175°C, features internal construction that minimizes inductance and enables max on-resistance of 1.5 mΩ at 10 V (1.8 mΩ at 4.5 V). Continuous drain current capability is rated up to 200 A.
Tags: power
designed
applications
automotive
Low-Voltage Trench MOSFET comes in 40 V rated version.
2015-03-24 13:31:07| Industrial Newsroom - All News for Today
Based on U-MOS IX-H semiconductor process, 40 V-rated TPHR8504PL comes in 5 x 6 mm SOP-Advance package and offers current rating of 150 A that promotes reliability. Degree of Qoss promotes efficiency in SMPS, including servers and telecom base stations, DC-DC converters, synchronous rectification, and other power management circuitry. Other characteristics include typical Rds(on) of 0.7 mΩ (0.85 mΩ max) and typical output capacitance (Coss) of 1,930 pF.
MOSFET extends battery usage in ultraportable applications.
2015-03-19 13:31:06| Industrial Newsroom - All News for Today
Offered in chipscale MICRO FOOT® package with 1 mm² footprint, Si8410DB TrenchFET® 20 V n-channel MOSFET is optimized for use as load switch, small-signal switch, and high-speed switch in power management applications. Device features low on-resistance of 37 mΩ at 4.5 V, 41 mΩ at 2.5 V, 47 mΩ at 1.8 V, and 68 mΩ at 1.5 V. With ratings down to 1.5 V and ±8 V VGS, MOSFET extends battery usage in wearable devices, smartphones, tablets, and solid-state drives.
Tags: applications
usage
battery
extends
Vishay Intertechnology's SQJ402EP MOSFET and DG250x Analog Switches Honored With 2014 CEM Editors' Choice Awards
2015-02-27 11:31:02| Industrial Newsroom - All News for Today
MALVERN, Pa. Vishay Intertechnology, Inc. (NYSE: VSH) today announced that the company's SQJ402EP 100 V n-channel power MOSFET and DG250x series of precision monolithic quad single-pole single-throw (SPST) analog switches have received China Electronic Market (CEM) magazine's 2014 Editors' Choice Awards. Winners...
Tags: choice
awards
editors
analog
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