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Four-Junction Solar Cell achieves peak efficiency of 43.6%.

2013-05-30 14:29:08| Industrial Newsroom - All News for Today

Designed to maximize conversion efficiency of commercial concentrator photovoltaic systems, Four-Junction Solar Cell uses two dual-junction sub cells grown on different III-V compound materials, which allows optimal band-gap combinations tailored to capture broad range of solar spectrum. Using substrate-bonding and layer-transfer technologies to stack non-lattice-matched materials, cell demonstrates more than 43% energy-generating efficiency over concentration range of 250–500. This story is related to the following:Green & CleanSearch for suppliers of:

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Western States Envelope & Label Receives Sixth Consecutive PEAK Award in 2013

2013-05-28 06:00:00| Industrial Newsroom - All News for Today

Butler, WI&mdash;Many often say three&rsquo;s a charm, but Western States Envelope Label will contest that six is even better. That&rsquo;s because they received a Print Excellence and Knowledge (PEAK) Award in 2013, making this their sixth year in a row.<br /> <br /> Western States earned a Grand Award in the Labels/Tags category for a unique product label for &ldquo;Big Papa Dill Pickles.&rdquo; Since these pickles are sold from convenient store and concession stand counters, this 4 x 6 ...

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China: Emissions peak hard to predict, expert says

2013-05-27 16:00:00| Climate Ark Climate Change & Global Warming Newsfeed

China Daily: Many variables will factor into when China's greenhouse gas emissions will peak, and the issue requires more in-depth analysis, Zhou Dadi, vice-chairman of the National Energy Advisory Committee, told China Daily on Friday. Recent media reports said China's greenhouse gas emissions might peak before 2025. The Chinese government has always attached great importance to climate change issues and has actively responded, said Zhou, who is also a professor at the Energy Research Institute of the National...

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Power Transistors scale to peak pulse power level of 100 W.

2013-05-24 14:36:19| Industrial Newsroom - All News for Today

Housed in 3 x 6 mm DFN or 2.5 x 4.5 mm SOT-89 package, GaN in Plastic Transistors operate at 50 V drain bias and leverage sophisticated thermal management techniques for reliability in surface mount applications. Units are available in 90, 50, and 15 W models that can be mounted on PCBs via ground/thermal arrays. Featuring internal stress buffers that allow operation up to 200°C channel temperature, transistors are suited for ultra compact military and civilian radar systems.   This story is related to the following:Gallium Nitride (GaN) Transistors |

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Mitsubishi to enter 2013 Pikes Peak International Hill Climb with two new MiEV Evolution II electric racers

2013-05-17 14:30:21| Green Car Congress

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