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I2C-Equipped, 1 Mbit FRAM can replace EEPROMs for data capture.
2014-02-27 14:31:30| Industrial Newsroom - All News for Today
Suited for applications requiring frequent rewriting of data, MB85RC1MT operates from 1.8–3.3 V in temperatures from -40 to +85°C and supports high-speed mode that enables read and write operations at frequencies of 3.4 and 1 MHz. Non-volatility means data is retained even when power is switched off, and random access to memory cells enables accelerated data writing. Rated for 10 trillion write-erase cycles, FRAM features 1 Mbit of memory and I²C serial interface. This story is related to the following:Ferroelectric Random Access Memories (FRAM)
Tags: data
replace
capture
fram
Category:Industrial Goods and Services