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NXP Launches GaN RF Power Transistors Optimized For Doherty Amplifiers In Cellular Base-Stations

2016-05-26 10:48:02| rfglobalnet Home Page

NXP Semiconductors N.V. has announced the expansion on their portfolio of 48V gallium nitride (GaN) RF power transistors optimized for Doherty power amplifiers for use in current and next-generation cellular base-stations. NXP is showcasing the new GaN transistors in booth 1839 at the IEEE International Microwave Symposium (IMS 2016) in San Francisco (23-26 May).

Tags: power cellular optimized launches

Category:Telecommunications

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