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Revolutionize High-Performance Power Conversion With TI's 600-V GaN FET Power Stage

2016-04-26 08:57:41| rfglobalnet News Articles

Building on decades of power-management innovation, Texas Instruments (TI) (NASDAQ: TXN) today announced the availability of600-V gallium nitride (GaN) 70-mΩ field-effect transistor (FET) power-stage engineering samples, making TI the first and only semiconductor manufacturer to publicly offer a high-voltage driver-integrated GaN solution.

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