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Discrete Fiber Amplifier offers long-range sensing capability.

2015-12-11 14:31:06| Industrial Newsroom - All News for Today

Used with plastic and glass fiber optic assemblies, DF-G3 can sense more than 10 ft with opposed mode fibers or more than 3 ft with diffuse mode fibers. Power increases detection reliability for dark targets at long range and enhances detection sensitivity when using specialty fiber assemblies for large area and small part detection applications. Available with 1 or 2 dual discrete outputs, amplifier features dual digital displays that simultaneously show signal level and threshold.

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70 W Discrete Power Transistor: TGF2957 Datasheet

2015-10-27 12:07:51| rfglobalnet Home Page

The TGF2957 is a 70W discrete GaN on SiC HEMT with an operating frequency in the DC – 12 GHz range, has a saturated output power of 48.6 dBm, and power gain of 19.2 dB at 3 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation.

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70 W Discrete Power Transistor: TGF2957 Datasheet

2015-10-27 12:07:51| wirelessdesignonline Downloads

The TGF2957 is a 70W discrete GaN on SiC HEMT with an operating frequency in the DC – 12 GHz range, has a saturated output power of 48.6 dBm, and power gain of 19.2 dB at 3 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation.

Tags: power discrete transistor datasheet

 

55 W Discrete Power Transistor: TGF2956 Datasheet

2015-10-27 12:03:08| rfglobalnet Home Page

The TGF2956 is a 55W discrete GaN on SiC HEMT with an operating frequency in the DC – 12 GHz range, has a saturated output power of 47.6 dBm, and power gain of 19.3 dB at 3 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation.

Tags: power discrete transistor datasheet

 

55 W Discrete Power Transistor: TGF2956 Datasheet

2015-10-27 12:03:08| wirelessdesignonline Downloads

The TGF2956 is a 55W discrete GaN on SiC HEMT with an operating frequency in the DC – 12 GHz range, has a saturated output power of 47.6 dBm, and power gain of 19.3 dB at 3 GHz. The transistor is constructed with TriQuint’s proven TQGaN25 process and is useful for a wide variety of high efficiency applications including military and civilian radar, radio communications, and test instrumentation.

Tags: power discrete transistor datasheet

 

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