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Power Amplifier Modules include S- and C-band versions.
2013-06-05 14:28:09| Industrial Newsroom - All News for Today
Based on Gallium Nitride (GaN) technology, NuPower™ S- and C-band PA modules come in ruggedized packages and exhibit typical efficiencies from 20%–40%. Solid-state PAs accept nominal 0 dBm input and deliver at least 15 W of saturated power across 2,500–6,000 MHz. With 3.15 in.³ form factor, modules suit restrictions of size, weight, and power-constrained applications, such as tactical communications and telemetry for unmanned systems. This story is related to the following:Power Amplifiers
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Toshiba Adds High Gain 200W GaN HEMT Power Amplifier for C-Band RADAR Applications
2013-06-04 06:00:00| Industrial Newsroom - All News for Today
Offer High Power, Gain and Efficiency to Enhance Weather RADAR Performance<br /> <br /> SEATTLE - 2013 INTERNATIONAL MICROWAVE SYMPOSIUM, Booth #2027, -Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, and its parent company, Toshiba Corp., today announced the addition of a 200W C-Band gallium nitride (GaN) semiconductor High Electron Mobility Transistor (HEMT) to its power amplifier product ...This story is related to the following:Power Transistors | Power Amplifiers
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KAW5050 High Power Transceiver Amplifier
2013-06-04 02:16:48| rfglobalnet Downloads
The KAW5050 high power transceiver amplifier provides peak powers of 1000W in the band 225-400MHz and is designed to carry all legacy and modern complex modulation formats. This unique design offers the customer the option of powering the system from either single or 3 phase power sources by a simple reconfiguration of the main AC input cable connections. The unit is designed for 24/7 continuous duty operation and comes with AR’s 3 year warranty.
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Power Amplifier features slew rate greater than 900 V/µs.
2013-06-03 14:29:45| Industrial Newsroom - All News for Today
Featuring all-solid-state design, Model 10/40A-HS provides output voltage of 0 to ±10 KVdc or peak AC with output current of 0 to ±40 mAdc or ±120 mA peak AC for 1 ms. Signal bandwidth ranges from DC to greater than 23 kHz. Four-quadrant, active output stage sinks or sources current into reactive or resistive loads throughout output voltage range. Configured as non-inverting amplifier with fixed gain of 1,000 V/V, product is suited for automated or computer-controlled systems. This story is related to the following:Machinery and Machining Tools Sponsored by: Haas Automation, Inc. - Category Sponsor AdElectronic Components and DevicesElectrostatic Voltmeters | Static Indicating Instruments | Electrometers | Amplifiers | DC Amplifiers | High Power Amplifiers |
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High Power Broadband Amplifier Meets The Needs Of Jamming Applications
2013-05-17 10:01:49| rfglobalnet News Articles
Amplifier Technology has introduced a new broadband, 100W RF amplifier designed for jamming applications. Combining the benefits of COTS availability for a lower installed cost with a rugged and reliable design, the 8813 broadband amplifier covers frequencies from 0.5GHz to 2.5GHz. The compact form factor means it is suitable for installation in both fixed and mobile applications.
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