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Celebrating Steady Progress: Forest Park Low Tank Reservoir & Pump Station

2014-01-17 17:34:46| PortlandOnline

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Asymmetric Dual N-Channel MOSFET features low on-resistance.

2014-01-17 14:32:39| Industrial Newsroom - All News for Today

Housed in 3 x 3 mm PowerPAIR® package utilizing TrenchFET Gen IV technology, 30 V Siliconix SiZ340DT is optimized for synchronous buck designs in cloud computing infrastructures, servers, telecommunication equipment, and client-side electronic devices. Low-side Channel 2 MOSFET of SiZ340DT offers low on-resistance of 5.1 mΩ at 10 V gate drive and 7.0 mΩ at 4.5 V, while high-side Channel 1 MOSFET features on-resistance of 9.5 mΩ at 10 V and 13.7 mΩ at 4.5 V. This story is related to the following:MOSFET Transistors |

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New Ultra Low Noise GaAs Amplifiers Operate From 10 To 17 GHz

2014-01-17 01:51:05| rfglobalnet News Articles

Custom MMIC, a developer of performance-driven monolithic microwave integrated circuits (MMICs), is adding two new low noise amplifiers, the CMD167 and the CMD167P3, to their growing product line.

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Ultra Low Noise GaAs Amplifiers

2014-01-16 12:42:37| rfglobalnet Products

Custom MMIC is adding two new low noise amplifiers, the CMD167 and the CMD167P3, to their growing product line. Both are ideally suited for EW and communications systems where small die size and low power consumption are needed.

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8-16 GHz Low Noise Amplifier: CMD167P3 Datasheet

2014-01-16 12:40:14| rfglobalnet Downloads

The CMD167P3 is a broadband MMIC low noise amplifier housed in a leadless 3x3 mm plastic surface mount package. The CMD167P3 is ideally suited for EW and communication systems where small size and low power consumption are needed. The device operates from 8 to 16 GHz and delivers greater than 16 dB of gain with a corresponding output 1 dB compression point of +11 dBm and noise figure of 1.8 dB. The CMD167P3 is a 50 ohm matched design which eliminates the need for external DC blocks and RF port matching.

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