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Product Video: New Doherty Amplifiers From Qorvo

2016-05-26 11:42:56| rfglobalnet Home Page

Product Video: New Doherty Amplifiers From Qorvo

NXP Launches GaN RF Power Transistors Optimized For Doherty Amplifiers In Cellular Base-Stations

2016-05-26 10:48:02| rfglobalnet Home Page

NXP Semiconductors N.V. has announced the expansion on their portfolio of 48V gallium nitride (GaN) RF power transistors optimized for Doherty power amplifiers for use in current and next-generation cellular base-stations. NXP is showcasing the new GaN transistors in booth 1839 at the IEEE International Microwave Symposium (IMS 2016) in San Francisco (23-26 May).

Tags: power cellular optimized launches

220 Watt Asymmetric Doherty Power Transistor: QPD2730 Datasheet

2016-05-16 15:41:34| rfglobalnet Home Page

The QPD2730 is a 220 Watt asymmetric Doherty power transistor composed of pre-matched, discrete GaN on SiC HEMTs. With an operational frequency range of 2.575 to 2.635 GHz, this transistor is ideal for W-CDMA/LTE, macrocell base station, active antenna, and asymmetric Doherty applications.

Tags: power watt asymmetric transistor

100 W GaN Amplifier And Doherty Transistor For Wireless Infrastructures

2016-05-16 15:32:24| rfglobalnet Home Page

Qorvo offers the TGM2635-CP 100W GaN as an X-band, high power MMIC amplifier fabricated on Qorvo’s GaN on SiC Process. Its package is a 10-lead bolt-down with a cure Cu base for superior thermal management. Both RF ports allow for simple system integration, making the amplifier ideally suited for both military and commercial x-band radar systems and data links.

Tags: wireless amplifier gan infrastructures