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2-6 GHz Solid State Power Amplifier: PTS6900 Datasheet

2016-02-08 10:35:30| rfglobalnet Downloads

The PTS6900 Solid State Power Amplifier (SSPA) is a low band CW amplifier operating within the 2 to 6 GHz frequency range ideally used for EW/ECM applications. The module incorporates an internal EMC filter on the 28 V input for full compliance with EMC requirements, a fast RF mute capability that enables RF output to be muted in less than 1 µs, and a built-in test capability used to monitor the internal DC to DC converters and baseplate over-temperature.

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2-6 GHz Solid State Power Amplifier: PTS6900

2016-02-08 10:33:13| rfglobalnet Products

The new PTS6900 Solid State Power Amplifier (SSPA) from TMD is a low band CW amplifier operating within the 2 to 6 GHz frequency range with nominal output power of 150 W and 55 dB of gain. With the utilization of the latest advances in 0.25 µm GaN MMIC technology and low loss power combiners, this amplifier is ideally used for EW/ECM applications.

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X-Band GaN Solid State Power Amplifier (SSPA): VSX3630 Datasheet

2016-02-05 11:06:47| rfglobalnet Home Page

The VSS3617 GaN solid state power amplifiers (SSPAs) are designed for operation in the X-band (7.8 – 9.8 GHz), and use as TWTA replacements for military radars. The utilized GaN transistors provide high gain, high efficiency, and excellent pulse fidelity resulting in exceptional AM/PM, phase-noise, and spectral regrowth performance.

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X-Band GaN Solid State Power Amplifier (SSPA): VSX3630

2016-02-05 11:04:59| rfglobalnet Home Page

CPI’s Beverly Microwave Division presents VSX3630 GaN solid state power amplifiers (SSPAs) operating in the X-band (7.8 – 9.8 GHz). These high efficiency, high power, compact amplifiers are rugged, reliable, easy to maintain, and are designed for use as TWTA replacements for military radars.

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S-Band GaN Solid State Power Amplifier (SSPA): VSS3617 Datasheet

2016-02-05 11:02:45| rfglobalnet Home Page

The VSS3617 GaN solid state power amplifiers (SSPAs) are designed for operation in the S-band (2.7 – 2.9 GHz), and for use as air traffic control radar transmitters. The utilized GaN transistors provide high gain, high efficiency, and excellent pulse fidelity resulting in exceptional AM/PM, phase-noise, and spectral regrowth performance.

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