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MACOM Announces New 650 W GaN On SiC HEMT Pulsed Power Transistor
2015-03-20 05:45:46| rfglobalnet Home Page
M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high-performance analog RF, microwave and optical semiconductor products, recently announced the new MAGX-000912-650L00 and MAGX-000912-650L0S, a 650 W gallium nitride (GaN) on silicon carbide (SiC) HEMT pulsed power transistor for L-band pulsed avionics applications. This transistor is available in standard flange or earless flange packaging.
Waseda team develops wide-temperature, high-voltage diamond transistor that can compete with SiC and GaN
2015-02-20 17:55:31| Green Car Congress
Tags: team
diamond
compete
sic
Lux: strategy is key as more efficient GaN, SiC power electronics enter market; automakers as integrators
2015-02-11 12:55:20| Green Car Congress
Toyota beginning on-road testing of new SiC power semiconductor technology; hybrid Camry and fuel cell bus
2015-01-29 12:55:37| Green Car Congress
Tags: power
technology
cell
beginning
3D Si@C core-shell Li-ion anodes show high capacity, rate capability and stable cycling
2015-01-11 15:55:30| Green Car Congress
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