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GaN on SiC Power Transistors

2015-07-29 13:06:12| rfglobalnet Products

Qorvo offers a large range of GaN on SiC power transistors as premiere solutions for GaN needs. These discrete power amplifiers are available in models that cover frequency ranges from DC-18 GHz. With a range of linear gain between 16.6 – 21 dB, and a saturated output power range between 37 and 54.2 dBm, these devices are ideal for a wide variety of broadband wireless, space, and military applications.

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GaN on SiC Power Transistors

2015-07-29 13:06:12| wirelessdesignonline Products

Qorvo offers a large range of GaN on SiC power transistors as premiere solutions for GaN needs. These discrete power amplifiers are available in models that cover frequency ranges from DC-18 GHz. With a range of linear gain between 16.6 – 21 dB, and a saturated output power range between 37 and 54.2 dBm, these devices are ideal for a wide variety of broadband wireless, space, and military applications.

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New Sumitomo SiC power transistor

2015-06-29 13:55:48| Green Car Congress

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JR Central begins tests of Mitsubishi's SiC power modules on Shinkansen train

2015-06-29 01:00:00| Railway Technology

Japan-based Mitsubishi Electric has started testing of railcar traction converter/inverter systems with all-silicon carbide (SiC) power modules installed on a N700 Shinkansen bullet train for Central Japan Railway Company (JR-Central).

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SiC MOSFET minimizes equipment size and power consumption.

2015-06-09 14:31:04| Industrial Newsroom - All News for Today

Adopting trench structure, SiC MOSFET (Metal Oxide Semiconductor Field Effect Transistor) offers ON resistance that decreases power loss in equipment ranging from industrial inverters and power supplies to power conditioners for solar power systems. Full SiC power module (1,200 V/180 A), incorporating trench-type SiC MOSFETs in a 2-in-1 circuit with integrated SiC SBDs, is also available.

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