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Toyota and Denso develop SiC power semiconductor for power control units; targeting 10% improvement in hybrid fuel efficiency

2014-05-20 16:30:11| Green Car Congress

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Dow Corning Launches Power Electronics Industry's First SiC Wafer...

2014-05-13 13:05:12| Electronics - Topix.net

MIDLAND, MI Dow Corning, a global leader in silicon and wide-bandgap semiconductor technology, today established a higher industry standard for silicon carbide crystal quality by introducing a product grading structure that specifies ground-breaking new tolerances on killer device defects, such as micropipe dislocations , threading screw ... (more)

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Richardson RFPD Introduces Two Ka-Band GaN On SiC Power Amplifiers From TriQuint

2014-04-25 03:07:39| rfglobalnet News Articles

Richardson RFPD, Inc. recently announces immediate availability and full design support capabilities for two Ka-band gallium nitride on silicon carbide (GaN on SiC) power amplifiers (PAs) from TriQuint.

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Richardson RFPD Introduces Two Ka-Band GaN On SiC Power Amplifiers From TriQuint

2014-04-25 03:07:39| wirelessdesignonline News Articles

Richardson RFPD, Inc. recently announces immediate availability and full design support capabilities for two Ka-band gallium nitride on silicon carbide (GaN on SiC) power amplifiers (PAs) from TriQuint.

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MACOM Announces High Efficiency 500 W GaN On SiC HEMT Pulsed Power Transistor For Avionics Applications

2014-02-07 05:25:25| rfglobalnet News Articles

M/A-COM Technology Solutions Inc. (“MACOM”), a leading supplier of high performance RF, microwave, and millimeter wave products, recently announced a new GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications.

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