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Home › 100 W GaN Amplifier And Doherty Transistor For Wireless Infrastructures

 

100 W GaN Amplifier And Doherty Transistor For Wireless Infrastructures

2016-05-16 15:32:24| rfglobalnet Home Page

Qorvo offers the TGM2635-CP 100W GaN as an X-band, high power MMIC amplifier fabricated on Qorvo’s GaN on SiC Process. Its package is a 10-lead bolt-down with a cure Cu base for superior thermal management. Both RF ports allow for simple system integration, making the amplifier ideally suited for both military and commercial x-band radar systems and data links.

Tags: wireless amplifier gan infrastructures

Category:Telecommunications

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