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Breakthrough May Pave The Way For Gallium Nitride To Supplant Silicon In Integrated Circuits
2016-02-05 05:10:24| wirelessdesignonline News Articles
Researchers at HRL Laboratories, LLC, have achieved the first demonstration of gallium nitride (GaN) complementary metal-oxide-semiconductor (CMOS) field-effect-transistor (FET) technology, and in doing so have established that the semiconductor’s superior transistor performance can be harnessed in an integrated circuit.
Tags: integrated
silicon
circuits
breakthrough
Category:Telecommunications
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