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Cree Confronts TWT Radar System Issues With Record-Breaking High Power RF Devices

2015-05-15 04:10:38| rfglobalnet Home Page

Cree, Inc., a leader in gallium nitride (GaN) RF devices, has introduced two industry-leading GaN HEMT (high electron mobility transistor) devices that solve a number of long-standing issues for radar systems employing traditional travelling wave tube (TWT) amplifiers.

Tags: high system power issues

Category:Telecommunications

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