Provides Access to Key Patents for GaN Power Device Market<br />
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DURHAM, NC – Cree, Inc. (Nasdaq: CREE), today announced that it signed a non-exclusive worldwide patent license agreement with Transphorm, Inc. that provides access to Cree’s extensive family of patents related to GaN high electron mobility transistor (HEMT) and GaN Schottky diode devices for use in the field of power conversion devices. The licensed family of patents addresses various aspects of making GaN ...This story is related to the following:Schottky Diodes | High Current Transistors