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DC 4 GHz GaN RF Transistors: QDP1010 Datasheet

2016-04-28 10:03:06| rfglobalnet Downloads

The QDP1010 is a discrete GaN on SiC HEMTs operating from the DC to 4 GHz frequency range. It is a 10W, 50V device with an output power level of 11W at 2 GHz, and a linear gain of 24.7 dB at 2 GHz. This transistor is ideal for wideband or narrowband amplifiers, jammers, and military radar, civilian radar, land mobile, military radio, and test instrumentation applications.

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