Operating from 2.7–24 V, MLX92231 and MLX92211 integrate Hall sensor element with offset cancellation mechanism, voltage regulator, and open-drain output driver. EEPROM memory, included, allows magnetic switching thresholds to be configured (including hysteresis). While MLX92211 targets applications requiring Hall effect latch magnetic characteristics, MLX92231 supports applications for Hall effect switch magnetic behavior. Both are constructed on mixed signal CMOS process technology.
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