Home › Element Six's GaN-On-Diamond Wafers Proven By Raytheon To Provide Three Times Improvement In Power Density Versus GaN-On-SiC For RF Devices
 

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Element Six's GaN-On-Diamond Wafers Proven By Raytheon To Provide Three Times Improvement In Power Density Versus GaN-On-SiC For RF Devices

2014-05-15 21:19:17| rfglobalnet Home Page

Element Six, the world leader in synthetic diamond supermaterials and a member of the De Beers Group of Companies, today announced that its Gallium Nitride (GaN)-on-Diamond wafers have been proven by Raytheon Company to significantly outperform industry standard Gallium Nitride-on-Silicon Carbide (GaN-on-SiC) in RF devices—reducing thermal resistance, increasing RF power density, and preserving RF functionality.

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