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Extremely Rugged LDMOS Ups The Power: NXP Unveils BLF188XR

2013-06-07 07:06:29| rfglobalnet News Articles

NXP Semiconductors N.V. recently introduced the BLF188XR – the newest member of its XR family of “eXtremely Rugged” LDMOS RF power transistors. Designed for the toughest engineering environments, the BLF188XR delivers improved ruggedness in real-world conditions, capable of withstanding a severe load mismatch with VSWR greater than 65:1 at 5 dB of compression.

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