Home › Fully Qualified Low-R(on) 650 V GaN FET comes in TO-247 package.
 

Keywords :   


Fully Qualified Low-R(on) 650 V GaN FET comes in TO-247 package.

2016-03-30 14:31:06| Industrial Newsroom - All News for Today

Available in TO-247 package that facilitates design and development, TPH3207WS GaN (gallium nitride) field effect transistor (FET) lets designers reduce overall power supply losses by as much as 40% while achieving up to 99% efficiency by implementing CCM bridgeless totem-pole PFC designs. On-resistance of 41 mΩ and Qrr of 175 nC help engineers improve system reliability, performance, and power density, and cascode configuration (EZ-GaN™) can be driven with off-the-shelf drivers.

Tags: fully package qualified gan

Category:Industrial Goods and Services

Latest from this category

All news
01.05Will Artificial Intelligence Be the End of Reps? Part 2
Industrial Goods and Services »
08.05OnPrintShop to showcase web-to-print capabilities at drupa
08.05Grafotronic announces Benelux DCL installation
08.05Onoxa Unveils First Line of Men\'s Grooming Products
08.05Edgewell Announces Fiscal Q2 Results
08.05Zuiko Finalizes Agreement to Acquire Delta
08.05NAD Recommends Unilever Discontinue or Modify Certain Antiperspirant Claims
08.05Verb Products Reformulates Curl Collection and Introduces New Curl Defining Mask
08.05Mitsui Chemicals Asahi Life Materials Develops Compostable Plastic
More »