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GaN Gives Power and Flexibility to L-Band Radar
2015-05-07 13:26:00| rfglobalnet Home Page
Sales of radar are on the rise causing an increase in shipments of air traffic control radar systems. The increase in production of these systems is spurring intensified research and development in the RF and microwave domain, with a stress on improving the performance of the L-band. Since L-band radar systems require thousands of Watts of pulsed power, high-power RF transistors need to be employed. GaN is the most promising of semiconductor materials used in construction of RF power transistors, enabling breakthroughs in power output capacity, temperature tolerance and efficiency.
Tags: power
flexibility
radar
gan
Category:Telecommunications
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