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GaN Power Amplifier is optimized for power and linearity.

2014-09-08 14:31:26| Industrial Newsroom - All News for Today

As 28–32 GHz GaN power amplifier (PA) in die form, CMD217 features >20 dB gain across operating frequency range with corresponding output 1 dB compression point of +36.7 dBm and saturated output power of +39.3 dBm (8.5 W). Power added efficiency is 28%–35% across band. This fully matched 50 Ω design requires only external bypass capacitors to complete bias circuitry. Suited for Ka-band communication systems applications, die is passivated for reliability and moisture protection. This story is related to the following:Communication Systems and EquipmentPower Amplifiers | Communications Amplifiers | High Power Amplifiers | Linear Amplifiers

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