As 28–32 GHz GaN power amplifier (PA) in die form, CMD217 features >20 dB gain across operating frequency range with corresponding output 1 dB compression point of +36.7 dBm and saturated output power of +39.3 dBm (8.5 W). Power added efficiency is 28%–35% across band. This fully matched 50 Ω design requires only external bypass capacitors to complete bias circuitry. Suited for Ka-band communication systems applications, die is passivated for reliability and moisture protection.
This story is related to the following:Communication Systems and EquipmentPower Amplifiers | Communications Amplifiers | High Power Amplifiers | Linear Amplifiers