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GaN Power Device features 150 V breakdown voltage.

2013-07-18 14:30:15| Industrial Newsroom - All News for Today

Enabling normally off operations, Model MB51T008A features on-state resistance of 13 mΩ and total gate charge of 16 nC, achieving half FOM of silicon-based power devices with equivalent breakdown voltage. Use of WLCSP packaging enables minimal parasitic inductance and high-frequency operations. IC is suited for high- and low-side switches in DC-DC converters employed in power supplies for data communications equipment, industrial products, and automobiles. This story is related to the following:Gallium Nitride (GaN) Transistors | Integrated Circuits (IC)

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