With current ratings from 8–250 A, gallium nitride (GaN) power transistors feature GaNPX™ packaging and are based on Island Technology®. Die consist of islands and is embedded within laminate construction. Series of galvanic processes replace conventional techniques, such as clips, wire bonds, and molding compounds. While packaged to be cooled via topside of chip using heat sink or fan, products can also be cooled from bottom surface of die through conduction to PCB.