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GaN-on-Si LEDs promote luminous efficacy and reduce power draw.

2015-10-08 14:31:07| Industrial Newsroom - All News for Today

Exhibiting luminous efficacy of 165 lm/W min under Ta=25°C, TL1L4 series (4A5B type) utilizes Gallium Nitride-on-silicon (GaN-on-Si) wafer technology and comes in 3.5 x 3.5 mm lens package. Available CCTs are 6500K, 5700K, 5000K, and 4000K, and CRI is Ra70. Supporting max forward current of 1.5 A at Ta<55°C and Tj<150°C, LEDs can serve such applications as street lights, floodlights, high/low bay lights, base lights, and downlights.

Tags: power reduce promote draw

Category:Industrial Goods and Services

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