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GaN-on-diamond makes RF progress
2014-11-04 06:08:57| Semiconductors - Topix.net
Technology achievements with respect to gallium nitride continue to propel this material toward new horizons in the realm of RF devices. Its relatively high electron mobility elevates its footing for more switching and RF power applications at higher breakdown voltages, lower leakage currents, and higher frequencies than competitive semiconductors such as silicon and silicon carbide .
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Category:Electronics and Electrical
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