Targeting 10 nm node semiconductor processing, 3D NAND, power ICs, and MEMS applications, SAP-100 Materials are based on organo-siloxane modified spin-on metal oxide thin films that are compatible with advanced photoresist lithography. Products offer tunable optical properties and provide optimized etch resistance in plasma etching processes, even at very low film thicknesses. Materials are applied with equipment common in both state-of-the-art and legacy fabs, eliminating need for new equipment.