Supplied in low-profile PQFN88 packages with patented EZ-GaN™ technology, TPH3002LD and TPH3002LS are 600 V GaN HEMTs featuring 290 mΩ RDS(on), 29 nC Q(rr), and low inductance for optimal high-frequency switching capability. LD devices also feature kelvin connection to isolate gate circuit from high-current output circuit to further minimize EMI. For smaller, lower power applications, TO220-packaged TPH3002PD and TPH3002PS also feature 290 mΩ RDS(on) and 29 nC Q(rr ).
This story is related to the following:Switching Transistors | Gallium Nitride (GaN) Transistors