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High Electron Mobility Transistors are JEDEC-qualified.

2014-03-25 13:31:23| Industrial Newsroom - All News for Today

Supplied in low-profile PQFN88 packages with patented EZ-GaN™ technology, TPH3002LD and TPH3002LS are 600 V GaN HEMTs featuring 290 mΩ RDS(on), 29 nC Q(rr), and low inductance for optimal high-frequency switching capability. LD devices also feature kelvin connection to isolate gate circuit from high-current output circuit to further minimize EMI. For smaller, lower power applications, TO220-packaged TPH3002PD and TPH3002PS also feature 290 mΩ RDS(on) and 29 nC Q(rr ). This story is related to the following:Switching Transistors | Gallium Nitride (GaN) Transistors

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