Home › High-Temperature Recess For Normally-Off Gallium Nitride Transistors
 

Keywords :   


High-Temperature Recess For Normally-Off Gallium Nitride Transistors

2015-07-14 10:55:46| rfglobalnet Home Page

Researchers in China and Hong Kong have claimed the highest output power density and power-added efficiency reported to date for gallium nitride (GaN)-based enhancement-mode metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) at 4GHz and in pulsed-mode.

Tags: recess transistors nitride gallium

Category:Telecommunications

Latest from this category

All news
»
24.115 2 PG
24.11215103TW 17svtw
24.11 Switch light
24.11Dr.SLUMP 19
24.11layover LP
24.11PING i230 6W 5
24.11BTS CD
24.11HG 56
More »