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High-Temperature Recess For Normally-Off Gallium Nitride Transistors

2015-07-14 10:55:46| rfglobalnet Home Page

Researchers in China and Hong Kong have claimed the highest output power density and power-added efficiency reported to date for gallium nitride (GaN)-based enhancement-mode metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) at 4GHz and in pulsed-mode.

Tags: recess transistors nitride gallium

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