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Home › IDT and EPC Collaborate to Integrate GaN, Silicon Into Semiconductor Devices

 

IDT and EPC Collaborate to Integrate GaN, Silicon Into Semiconductor Devices

2015-06-01 13:25:33| rfglobalnet Home Page

Integrated Device Technology, Inc.(IDT) has announced its collaboration with Efficient Power Conversion (EPC) to develop technology based on Gallium nitride (GaN), a semiconductor material widely recognized for its speed and efficiency. Under their collaboration, the companies will explore integratingEPC’s eGaN technology with leadingIDTsolutions.

Tags: devices integrate silicon semiconductor

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