Supplied in 3.85 x 3.85 x 2.24 mm package, 850 nm VSMY98545 features 42 x 42 mil emitter chip that supports thermal resistance of 10 K/W junction-to-pin and enables drive currents up to 1 A and pulses up to 5 A. Integrated lens supports ±45° angle of half intensity, resulting in radiant intensity of 350 mW/sr at 1 A and 1,600 mW/sr at 5 A (pulses). Emitter offers optical power to 660 mW at 1 A, switching speeds down to 15 ns, and forward voltages down to 1.8 V at 1 A.
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