IR emitters VSMG10850 (850 nm) and VSMB10940 (940 nm) and package-matched, high-speed silicon PIN photodiode VEMD10940F, with radiant sensitivity from 780–1,050 nm, offer ±75° angle of half intensity in 3 x 2 x 1 mm side-view SMT package. Offered in clear, untinted plastic packages, IR emitters provide radiant intensity of 1 mW/sr typ @ 20 mA and switching times of 15 nsec. Featuring daylight blocking filter, VEMD10940F offers reverse light current of 3 µA and dark current of 1 nA.
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