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Integra Announces New L-Band GaN-on-SiC Products

2013-06-04 05:58:45| rfglobalnet News Articles

Integra Technologies, Inc. (ITI), a leading manufacturer of high-power pulsed RF transistors, recently announced the development of two Gallium Nitride on Silicon Carbide (GaN on SiC) technology devices targeted for the L-band market. Integra’s world-class RF design team has launched two new products characterized in the L-band: the IGN1011M675 and the IGN1011M1200.

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