Offered in chipscale MICRO FOOT® package with 1 mm² footprint, Si8410DB TrenchFET® 20 V n-channel MOSFET is optimized for use as load switch, small-signal switch, and high-speed switch in power management applications. Device features low on-resistance of 37 mΩ at 4.5 V, 41 mΩ at 2.5 V, 47 mΩ at 1.8 V, and 68 mΩ at 1.5 V. With ratings down to 1.5 V and ±8 V VGS, MOSFET extends battery usage in wearable devices, smartphones, tablets, and solid-state drives.