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NAND Flash Memory Device has radiation-tolerant design.

2014-04-08 14:31:45| Industrial Newsroom - All News for Today

Part No. CI-1HN89, based on single-level cell NAND flash technology, offers 8 Gb of reliable data storage in space, military, medical, and other harsh environments subject to potential radiation exposure. Configured as asynchronous NAND flash, device's high-density memory capacity consists of one 8 Gb (1024Mx8) die in hermetically sealed, 48-lead ceramic package. CMOS floating gate technology enables 100K program/erase cycles and 10 year data retention. This story is related to the following:Flash Memories

Tags: design flash memory device

Category:Industrial Goods and Services

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