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NOR Flash Memory Devices offer fast read/write time.

2015-03-16 13:31:07| Industrial Newsroom - All News for Today

Available with 16-, 32-, or 64-Mbit of memory, 3 V Series SST26VF Serial Quad I/O™ SuperFlash® Memory Devices complete sector and block erase commands in just 18 ms and full chip erase operation in 35 ms. SQI interface, consisting of 104 MHz quad-bit address and data multiplex I/O serial interface, enables low-latency execute-in-place capability with minimal processor buffer memory. Standby current consumption is 15 µA, typical, and active read current at 104 MHz is 15 mA, typical.

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