Housed in thermally enhanced PowerPAK® SO-8 package, Model SiR872ADP extends ThunderFET® technology to 150 V. Device offers low on-resistance of 18 mΩ at 10 V and 23 mΩ at 7.5 V while maintaining low gate charge of 31 nC at 10 V and 22.8 nC at 7.5 V. N-channel TrenchFET® power MOSFET is optimized for primary-side switching and secondary-side synchronous rectification in DC/DC converters, DC/AC inverters, and boost converters for telecom bricks, solar micro-inverters, and brushless DC motors.
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