Housed in 1.6 x 1.6 x 0.6 mm CSP MICRO FOOT® package, 8 V n-channel Si8424CDB and -20 V p-channel Si8425DB offer maximum on-resistance of 20 mΩ and 23 mΩ, respectively, at 4.5 V gate drive. Smaller 8 V n-channel Si8466EDB, measuring 1 x 1 x 0.55 mm, features max on-resistance of 43 mΩ at 4.5 V and provides 3,000 V typical ESD protection. RoHS-compliant and halogen-free, TrenchFET® power MOSFETs are suited for battery or load switching in power management applications for portable electronics.
This story is related to the following:MOSFETs | Field Effect Transistors (FET)